Structure for low cost mixed memory integration, new NVRAM structure, and process for forming the mixed memory and NVRAM structure

摘要

A semiconductor memory device including an NVRAM cell structure, a DRAM cell structure, and an SRAM cell structure. The NVRAM cell structure, the DRAM cell structure, and the SRAM cell structure are on the same substrate. An NVRAM cell structure. Processes for forming a memory structure that includes NVRAM, DRAM, and/or SRAM memory structures on one substrate and processes for forming a new NVRAM cell structure.