发明名称 Optical semiconductor device with quantum wires, fabrication method thereof, and light source apparatus, and optical communication system using the same
摘要 An optical semiconductor device includes a semiconductor substrate, a first region formed on the substrate and a second region formed on the substrate. The first region has a first active layer, and the second region has a second active layer. At least one of the first active layer and the second active layer contains quantum wires which extend in a cavity direction of the device. The device is constructed such that the first active layer and the second active layer can be stimulated independently from each other.
申请公布号 US5881086(A) 申请公布日期 1999.03.09
申请号 US19960729576 申请日期 1996.10.11
申请人 CANON KABUSHIKI KAISHA 发明人 MIYAZAWA, SEIICHI
分类号 H01S5/062;H01S5/0625;H01S5/34;(IPC1-7):H01S3/19;H04B10/00 主分类号 H01S5/062
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