发明名称 Well resistor for ESD protection of CMOS circuits
摘要 A circuit for providing electrostatic discharge (ESD) protection is disclosed. The circuit comprises a pair of CMOS field effect pull up and pull down transistors with reduced resistance source and drain, having a well resistor formed external to them between supply and ground busses respectively. During an ESD event, the well resistors serve to both limit the current flow through the transistors, and reduce the voltage drop across them.
申请公布号 US5880917(A) 申请公布日期 1999.03.09
申请号 US19970906174 申请日期 1997.08.04
申请人 MICRON TECHNOLOGY, INC. 发明人 CASPER, STEPHEN L.;MA, MANNY K. F.;SHER, JOSEPH C.
分类号 H01L21/8242;H01L27/02;H01L27/108;(IPC1-7):H02H9/00 主分类号 H01L21/8242
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