| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming wiring of a semiconductor element which shortens a turnaround time and improves the reliability of the element and can be applied to a field programmable gate array, even if the element has a micro wiring width. SOLUTION: This method of forming a wiring comprises the steps of forming a plurality of wirings 43 on a semiconductor substrate 41, evaporating a first conductive material 45 for forming silicide on the entire surface of the semiconductor substrate 41 including the wirings 43, forming a second conductive material 45a by irradiating with a laser beam the first conductive material 45, corresponding to a part where the wirings 43 are jointed to each other, and removing the first conductive material 45 except the second conductive material. |
