摘要 |
A batch process for the high-pressure forming of metal plugs in the dielectric layers of semiconductor wafers. After holes are etched in the dielectric layer of each wafer, and a layer of a metal such as aluminum deposited over the dielectric, both the etching and the deposition being done in vacuum chamber cluster machines, the wafers are removed from the cluster machines and placed together in a high pressure chamber where they are subjected to high isostatic pressure that forces the metal into the holes.
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