发明名称 Batch process for forming metal plugs in a dielectric layer of a semiconductor wafer
摘要 A batch process for the high-pressure forming of metal plugs in the dielectric layers of semiconductor wafers. After holes are etched in the dielectric layer of each wafer, and a layer of a metal such as aluminum deposited over the dielectric, both the etching and the deposition being done in vacuum chamber cluster machines, the wafers are removed from the cluster machines and placed together in a high pressure chamber where they are subjected to high isostatic pressure that forces the metal into the holes.
申请公布号 US5879739(A) 申请公布日期 1999.03.09
申请号 US19970803468 申请日期 1997.02.20
申请人 TOWER SEMICONDUCTOR LTD. 发明人 LEVY, JEFF
分类号 H01L21/768;(IPC1-7):B05D5/12 主分类号 H01L21/768
代理机构 代理人
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