发明名称 |
Sense amplifier enable signal generator for semiconductor memory device |
摘要 |
A sense amplifier enable signal generator for a semiconductor memory device, comprising a counter for generating a pulse signal synchronously with a clock signal when a row address strobe bar signal is made active and suppressing the generation of the pulse signal when the row address strobe bar signal is disabled, and a comparator for generating a sense amplifier enable signal when an output value from the counter reaches a predetermined time delay value and suppressing the generation of the sense amplifier enable signal when the row address strobe bar signal is disabled. According to the present invention, a sense amplifier can be operated at a proper time without being affected by a process parameter, an operating voltage, temperature, etc.
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申请公布号 |
US5881007(A) |
申请公布日期 |
1999.03.09 |
申请号 |
US19970965861 |
申请日期 |
1997.11.07 |
申请人 |
HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. |
发明人 |
JEONG, YONG GWON;SON, JIN SEUNG |
分类号 |
G11C11/409;G11C7/06;G11C11/407;(IPC1-7):G11C7/02 |
主分类号 |
G11C11/409 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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