发明名称 SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND ITS MANUFACTURE
摘要 PROBLEM TO BE SOLVED: To prevent the deterioration of light-emitting characteristics and obtain high luminance and long life by forming a lattice distortion layer having crystal defects, in such a manner that the diffusion and infiltration of impurities from a clad layer into an active layer is prevented. SOLUTION: Layers 18A and 22A which have lattice distortion on an active layer 20 sides are formed on clad layers 18 and 22, respectively. The distortion layers 18A and 22A can be constituted as either one of a layer, wherein a dopant is piled up and point defect and misfit transposition exist at a high density, or a layer wherein the lattice constant is different from other parts of the clad layers and crystal defect exists. By forming such distortion layers 18A, 22A, impurities with which the clad layers 18, 22 are doped are trapped and will not infiltrate the active layer 20. As a result, the deterioration of light-emitting characteristics is restrained, and a light-emitting element of high luminance and long life can be realized.
申请公布号 JPH1168150(A) 申请公布日期 1999.03.09
申请号 JP19970216545 申请日期 1997.08.11
申请人 TOSHIBA CORP 发明人 KAMAKURA TAKANOBU
分类号 H01L33/10;H01L33/32;H01L33/40;H01S5/00;H01S5/323 主分类号 H01L33/10
代理机构 代理人
主权项
地址