SiC/111-V-nitride heterostructures on SiC/SiO2/Si for optoelectronic devices

摘要

A low-cost Si-based construction for optical and electronic bulk-heterostructure devices and multiple-quantum-well devices in which the active layers of the device are SiC or AlGaN or InGaN or InAlN. Material quality is high, and the MQW devices such as blue light lasers or LEDs have stable pseudomorphic layers with low defect densities. The low-cost large-area 3C SiC substrate is created by converting 100% of a 100-500 angstrom ( ANGSTROM ) layer of Si in a silicon-on-insulator wafer to 3C SiC with propane at 1300 degrees C. The SiO2 layer provides strain-free support for the "perfect" 3C SiC crystal layer. Direct-gap wurtzite nitride heterostructures, bulk or pseudomorphic MQW, are grown upon an (0001) 6H SiC epilayer on the (111) 3C SIC substrate, or directly upon the (111) 3C SiC substrate. For zincblende heterostructures, a (100) 3C SiC substrate is used.