发明名称 Self-cleaning plasma processing reactor
摘要 A method for simultaneously processing a workpiece using a plasma and cleaning the reactor in which processing takes place is disclosed. The plasma generated in the reactor performs simultaneous workpiece processing and reactor cleaning. Reactor cleaning may be accomplished by directing a portion of the plasma at an inner surface of the reactor such as by a power source auxiliary to that used to produce the processing plasma. An apparatus for carrying out a method for simultaneously processing a workpiece with a plasma and cleaning a reactor of etch residues generated from processing is disclosed.
申请公布号 US5879575(A) 申请公布日期 1999.03.09
申请号 US19970976539 申请日期 1997.11.21
申请人 APPLIED MATERIALS, INC. 发明人 TEPMAN, AVI;YE, YAN
分类号 H05H1/46;C23F4/00;H01J37/32;H01L21/302;H01L21/304;H01L21/3065;(IPC1-7):H05H1/00 主分类号 H05H1/46
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