发明名称 Multiregion solder interconnection structure
摘要 An apparatus and method for forming solder interconnection structures that reduce thermo-mechanical stresses at the solder joints of a semiconductor device and its supporting substrate. In one embodiment, the solder interconnection structure of the present invention comprises a semiconductor device and a substrate having a plurality of solder connections extending from the substrate to electrodes or bond pads on the semiconductor device. A multilayer structure is disposed between the semiconductor device and substrate filling the gap formed by the solder connections. The multilayer structure includes a first layer and a second layer, each having a different coefficient of thermal expansion. Thus, in accordance with the present invention, the stress concentration points are moved away from the solder joints of the semiconductor device and substrate to a point located between the first and second layers of the filler structure.
申请公布号 US5880530(A) 申请公布日期 1999.03.09
申请号 US19960625797 申请日期 1996.03.29
申请人 INTEL CORPORATION 发明人 MASHIMOTO, YOHKO;INOUE, SHUJI;KUBOTA, JIRO;KURODA, MASHAHIRO
分类号 H01L21/56;H01L21/60;(IPC1-7):H01L23/48;H01L23/52;H01L23/29 主分类号 H01L21/56
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