Photomask having a half-tone type phase shift material and chrome pattern on a transparent substrate

摘要

A half-tone phase shift mask capable of preventing light from being transmitted in undesired areas, and thus capable of obtaining desired fine patterns. The present invention is to provide a photomask for simultaneously forming photoresist patterns on a first area in which fine patterns are to be formed and on a second area in which relatively large photoresist patterns are to be formed in a semiconductor device. The photomask comprises a transparent substrate, half-tone phase shift patterns disposed on the first area of the transparent substrate and light screen patterns disposed on the second area of the transparent substrate.