| 摘要 |
PROBLEM TO BE SOLVED: To provide an optical semiconductor element containing crystalline defects which can sustain a metastable condition, even at relatively high temperature of room temperature or more, and a method for manufacturing the element. SOLUTION: This optical semiconductor device includes a base substrate 1, a semiconductor layer 3 formed on the base substrate 1, a Schottky electrode 5 through which any light can be passed, and an ohmic electrode 2 formed on the rear side of the base substrate 1. The semiconductor layer 3 has defects introduced by conducting plasma irradiation or ion implantation. The method for manufacturing the optical semiconductor element includes a process of introducing the defects into the semiconductor layer 3 by subjecting the layer 3 provided on the substrate 1 to a plasma irradiation or ion-implantation process, and a step of forming the light-permeable Schottky electrode 5 on the front surface of the layer 3 and forming the ohmic electrode 2 on the rear side of the base substrate 1. |
