| 摘要 |
PROBLEM TO BE SOLVED: To enable fine connection and miniaturize a package by a method wherein each of conductive route end parts which are performed plating composed of Sn as a main component is provided on a main face side of a heat- resistant base material, and their conductive route end parts are connected to a bump with Au/Sn liquid layer reaction. SOLUTION: A thin metal is formed by sputtering, etc., on a heat-resistant base material 11, and a required pattern is formed by resist on the metal. Next, Cu is grown by electrolytic plating to form a wiring 61 by patterning. Sn plating is performed on a surface of a flip connecting pad 51 of the wiring 61 to form each of conductive route end parts. A plurality of electrode pads 8 are disposed on a peripheral side of a semiconductor chip 2, and a bump 4 composed of Au as a main component is formed via a barrier metal on the electrode pad 8, and the Au bump 4 is connected to the flip-chip connecting pad 51 which is performed Sn-plating with Au/Sn liquid layer reaction. |
