| 摘要 |
PROBLEM TO BE SOLVED: To simplify the manufacture process and embody the stable movement of a cell by forming a source electrode on a gate insulating film corresponding to the bottom of a trench, and forming a drain region within an active layer corresponding to the top of the substrate at a certain distance apart from the gate electrode. SOLUTION: An active layer is made on a substrate 41 and a trench 42. A gate insulating film 44 is made on an active layer. First and second gate electrodes 45a and 46b are made on the gate insulating film 44, corresponding to the first and second flanks of the trench 42. Then, a source electrode S is made in the active layer corresponding to the bottom of the bottom of the trench between the first and second gate electrodes 45a and 45b, and two drain electrodes d are made within the active layer, corresponding to the top of the substrate 41 at a certain distance apart from the first and the second gate electrodes 45a and 45b. Here, first and second offset regions II are made within the active layer between the first and the second electrodes 45a and 45b and a drain electrode D. |
