| 摘要 |
PROBLEM TO BE SOLVED: To prevent a metal film wiring from peeling and form a highly reliable device, by providing a titanium nitride film between a titanium film and an insulating film which partially contains an insulating film that contains fluorine. SOLUTION: On a substrate 201 a silicon oxide film 202 is formed, and on the part of its surface a first wiring 203 having a stack structure composed of a titanium film 203a, a titanium nitride film 203b, an aluminum-based metal film 203c, a titanium film 203d and a titanium nitride film 203e, are formed. On the first wiring 203, an interlayer insulating film 204 composed of a silicon oxide film that contains an Si-F group is formed, and a wiring having a stack structure composed of a titanium nitride film 207a and a tungsten film 206b is formed. On the surface of the interlayer insulating film 204, a second wiring 207 is formed by leading out an electrode to the surface of the interlayer insulating film 204, and is connected with a connecting hole wiring. As the titanium nitride film on the surface of the first wiring is brought into contact with the titanium nitride film on the lower layer of the second wiring, low resistance highly reliable connection is provided. |
