发明名称 SEMICONDUCTOR LASER AND MANUFACTURE THEREOF
摘要 PROBLEM TO BE SOLVED: To provide high monomode stability, yield, efficiency, and output characteristics by setting the element length of the specific range as the length of diffraction grating region, and the specific range as the product of the coupling coefficient of diffraction grating and the length of the diffraction grating region. SOLUTION: An active layer 104 is installed between an electrode 106 on the high reflectivity side of an end face 102 and an electrode 106 on the low reflectivity side of an end face 103. The layer 104 is caught in an optical guide layer 105, and a diffraction grating 101 is formed in a part of the layer 105. Also, a resonance length between the high reflectivity end face 102 and the low reflectivity end face 103 is assumed to be 250μm. When the resonance length differs, the region length of the diffraction grating 101 is adjusted between 52% and 64% of the element length, and the product of the diffraction grating coupling coefficient and the length of the diffraction grating region is adjusted between 0.8 and 2. Thereby, the apparatus provides high monomode stability, yield, efficiency, and output characteristics.
申请公布号 JPH1168220(A) 申请公布日期 1999.03.09
申请号 JP19970215068 申请日期 1997.08.08
申请人 NEC CORP 发明人 OKUDA TETSURO
分类号 H01S5/00;H01S5/12;(IPC1-7):H01S3/18 主分类号 H01S5/00
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