| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon crystal which is doped in high concentration. SOLUTION: An element X having a large ion diameter and an element Y, having a small ion diameter in comparison with silicon, are added to the atmosphere for growing a silicon single crystal at a ratio of X:Y=1:(1+α) or X:Y=(1+α):1, (1<=α<=5) for doping the silicon crystal to a high concentration of 10<20> to 10<22> cm<-3> . This method is performed in a pull-up growth method, an epitaxial growth method, or a selective diffusion method. This method can greatly improve the carrier concentration by simultaneous doping and produce a metallic silicon having a resistivity which is usable for wiring.
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