ETCHING OF SUBSTRATE CONTAINING SILICON OXIDE AS MAIN COMPONENT

摘要

PROBLEM TO BE SOLVED: To process a three-dimensional structure with precision of theμm order on a substrate which contains silicon oxide as the main component. SOLUTION: A silicon oxide film 10 having an opening with a width a as well as a photoresist layer 12 as an etching mask are formed on a synthesized quartz substarte 2. The substrate 2 is etched with an aqueous solution containing hydrogen fluoride. Since good adhesion is obtained between the substrate 2 and the silicon film 10, a groove 8 having a depth d and a width of (a+2d) is formed on the substrate 2, with an aqueous solution containing hydrogen fluoride entered from the openings of the film 10 and the photoresist layer 12.