| 摘要 |
PROBLEM TO BE SOLVED: To efficiently heat a substrate while suppressing heating of a quartz member, and to appropriately perform measurements of temperature, by providing lamps for heating the substrate by irradiating light having an effective wavelength band not exceeding a fundamental absorption edge wavelength, to a substrate. SOLUTION: A substrate processing unit 1 has a device for irradiating light from lamps 21 to heat a semiconductor substrate 9. Temperatures of the substrate 9 under heating is measured by a radiation thermometer 31. In this substrate processing unit 1, the substrate 9 is subjected to heat treatment in a quartz chamber 41 made of quartz. Sulfer is employed for the lamps 21, leading to high spectral radiation intensity of the light as within a wavelength of 0.4-0.7μm. A wavelength band of high spectral radiation intensity is called an effective wavelength band. Si has a character of efficiently absorbing light whose wavelength is 1.1μm or less. Since the effective wavelength band of the light emitted from the lamps 21 does not exceed the fundamental absorption edge wavelength of Si, the light emitted from the lamps 21 is efficiently absorbed by the substrate 9.
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