发明名称 LEVELING METHOD FOR PROTRUDING ELECTRODE OF SEMICONDUCTOR ELEMENT
摘要 PROBLEM TO BE SOLVED: To make leveling height of protruding electrodes uniform with high precision by reducing the variance in leveling height of the protruding electrodes of a semiconductor element, when the height of a plurality of protruding electrodes formed on the semiconductor element is made uniform by sandwiching the semiconductor element between two plates and adding a load. SOLUTION: When the height of a plurality of protruding electrodes 1 formed on a semiconductor element 2 is made uniform by sandwiching a semiconductor element 2 between two plates 3 and 4 and adding a load, a material 5 that distorts elastically is inserted inbetween a surface 2a of the semiconductor element 2, on which the protruding electrode 1 is not formed and a leveling plate (on the lower side) 4, and under this condition, the tip of the protruding electrode 1 is squashed by adding the load, so that the height of the plurality of protruding electrodes 1 is leveled uniformly.
申请公布号 JPH1167772(A) 申请公布日期 1999.03.09
申请号 JP19970217913 申请日期 1997.08.13
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 AZUMA KAZUJI;YAMAMOTO AKIHIRO;YOSHIDA KOICHI
分类号 H01L21/60;H01L21/321 主分类号 H01L21/60
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