| 摘要 |
PROBLEM TO BE SOLVED: To reduce leak current with high reverse voltage applied by first forming a silicon dioxide film while applying ultraviolet rays onto a pn junction surface and thereafter sealing the silicon dioxide film and a second film adjacent to the silicon dioxide film using a molding resin. SOLUTION: Far ultraviolet rays are applied onto a semiconductor surface to form a silicon dioxide film 4 that becomes a first passivation film. Then, a second passivation film 5 is formed by covering the film 4 and first solder portions 12 and 13. Further, a molding resin 6 serving also as a package is formed by covering the film 5, an anode electrode 22 and a cathode electrode 23. A polyimide resin 5 of which the film 5 is made is applied, and cured in an atmosphere of nitrogen at temperatures ranging from 150 to 250 deg.C. As the final step, an epoxy resin 6 is formed by a transfer molding method, and the resin 6 is after-cured in the atmosphere of nitrogen at a temperature lower than the temperature for curing the film 5. |
