发明名称 Asymmetric snubber resistor
摘要 An asymmetric snubber resistor in accordance with the present invention includes a cathode, an N+ region, an N- region, a plurality of P+ regions, and an anode. The N+ region is disposed over the cathode, the N- region is disposed over the N+ region, the plurality of P+ regions are disposed over the N- region, and the anode is disposed over the plurality of P+ regions and exposed portions of the N- region. The asymmetric snubber may also include N regions between the P+ regions. The asymmetric snubber resistor replaces the snubber diode and the snubber resistor in a typical snubber circuit.
申请公布号 US5880513(A) 申请公布日期 1999.03.09
申请号 US19960634371 申请日期 1996.04.18
申请人 HARRIS CORPORATION 发明人 TEMPLE, VICTOR A.K.;ARTHUR, STEPHEN D.;AL-MARAYATI, SABIH;YANG, ERIC X.
分类号 H01C13/00;H01L21/822;H01L27/04;H01L29/8605;H01L29/861;H03K17/0814;(IPC1-7):H01L23/58;H01L29/00;H01L29/93 主分类号 H01C13/00
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