发明名称 |
Method of forming a perovskite structure semiconductor capacitor |
摘要 |
A semiconductor capacitor structure is made from a fabrication method which includes a step for forming an insulation film having a contact hole so that a portion of a substrate is exposed therethrough. Thereafter, a composite first electrode composed of a conductive plug, an anti-oxide film and a Perovskite structure conductive seed layer are formed on a portion of the insulation film including the contact hole. A Perovskite structure dielectric film is formed on the first electrode, and a Perovskite structure second electrode on the dielectric film is formed. The capacitor has a high dielectric constant approaching that of an epitaxial structure of a mono-crystalline substrate, and interfaces with more stabilized grain boundaries than those of a poly-crystalline structure. Hence, the reduction of trapped charge density between interfaces of the electrodes and dielectric films leads to a decreased leakage current and an improved TDDB (time-dependent direct breakdown) property.
|
申请公布号 |
US5879956(A) |
申请公布日期 |
1999.03.09 |
申请号 |
US19960756371 |
申请日期 |
1996.11.26 |
申请人 |
LG SEMICON CO., LTD. |
发明人 |
SEON, JEONG-MIN;KIM, HWAN-MYEONG |
分类号 |
C30B29/22;H01L21/02;H01L21/822;H01L21/8242;H01L21/8247;H01L27/04;H01L27/108;H01L29/788;H01L29/792;H01L39/02;H01L39/24;(IPC1-7):H01L21/824 |
主分类号 |
C30B29/22 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|