| 摘要 |
A chemical mechanical polishing composition for polishing an oxide layer of a semiconductor device, the composition comprising an alkaline aqueous dispersion containing generally uniformly-shaped nanocrystalline particles of cerium oxide derived from a physical vapor synthesis process, generally uniformly-shaped particles of silicon dioxide, and wherein the cerium oxide particles are substantially the same or smaller in size and size distribution to the silicon dioxide particles. The ratio of the weight of the silicon dioxide in the composition to the weight of the cerium oxide in the composition is in the range from about 7.5:1 to about 1:1. |
