| 摘要 |
A process for forming a stack of metamorphic III-V, II-VI or IV semiconductor material layers, exhibiting several percent lattice mismatch between themselves or wrt. the substrate, is carried out by (a) pseudomorphic deposition of an interfacial material (I) on the substrate material (S), of melting temperature (TF<s>), at below the melting temperature (TF) of the material (I); (b) pseudomorphic deposition of a material (E) of melting temperature (TF<e>) on the interfacial material (I) at below temperature (TF); (c) annealing of the interfacial layer (I) to cause relaxation of the material layer (E) by generating localised dislocations in the interfacial layer (I); (d) cooling of the interfacial layer (I); and (e) epitaxial growth of material (E) or any other material with the same lattice parameter (ae). Also claimed is a material obtained by the above process and used in the production of optoelectronic and microelectronic devices, e.g. a vertical microcavity laser. |
