DEFECT CORRECTION METHOD FOR HALFTONE PHASE SHIFT MASK

摘要

PROBLEM TO BE SOLVED: To provide a defect correction method for a phase shift mask depositing a correction film having an optical characteristic equivalent or close to a semi-transmissive film so as to correct by a comparatively simple method using an FIB(focusing ion beam). SOLUTION: An ion beam is irradiated onto the short defect of a halftone phase shift mask having at least semi-transmissive film pattern on a transparent substrate as feeding film material so as to deposit a correction film comprising the film material or its reaction substance to correct the short defect of the semi-transmissive film pattern so that the defect correction of the halftone phase shift mask is conducted. After previously grasping a relationship (the figure) between light transmittance and phase difference against the thickness of a correction film to be deposited, the substantially same correction film as the semi-transmissive film is deposited based on the relationship. At that time, the diameter of an aperture mounted on a focusing ion beam device and the thickness of the correction film are changed.