Implanting nitride to produce gate oxide with different-thickness in hybrid and insertion ULSI

摘要

Production if an IC device requires the following steps to be performed - Provide semiconductor substrate with surface and that substrate has a 1st area, which will generate 1st MOS devices and a 2nd area which will generate several 2nd MOS devices; - Provide 1st dopant of 1st density on 1st area surface of substrate; - Provide 2nd dopant of 2nd density on 2nd area surface of substrate; - Oxidation substrate surface in single oxidation process, and generate oxide with 1st thickness on 1st area, and generate oxide with 2nd different thickness on 2nd area of substrate; - Generate 1st MOS device with 1st thickness oxide on 1st area, and generate 2nd MOS device with 2nd thickness oxide on 2nd area of substrate.