| 摘要 |
PROBLEM TO BE SOLVED: To obtain a polymer capable of forming a high-sensitivity and a high-resolution resist resin for a specific short-wavelength ArF laser excellent in process adaptability and useful in the ultrafine processing field of semiconductors by including a polyorganosilsesquioxane having a specific structure therein. SOLUTION: This polymer contains a compound represented by the formula [R1 and R2 are each a 1-4C alkyl or an ester decomposable with an acid; R3 to R6 are each a 1-4C alkyl or H; (n) is >0] and is obtained by carrying out an addition reaction of an acrylic monomer having a group decomposable with the acid (concretely, t-butyl, t-butoxycarbonyl, trimethylsilyl, tetrahydropyranyl, ethoxyethyl or the like) with a polyorganosilsesquioxane having, e.g. (Z) an unsaturated functional group in the side chain (concretely, vinyl or the like) (e.g. the one obtained by hydrolyzing a trialkoxysilane having an alkyl and a trialkoxysilane having the group Z and condensing the resultant hydrolyzates) in the presence of a radical initiator. |
