REDUCTION OF CHARGE LOSS IN NONVOLATILE MEMORY CELLS BY PHOSPHOROUS IMPLANTATION INTO PECVD NITRIDE/OXYNITRIDE FILMS

摘要

A semiconductor device (400) formed in a semiconductor substrate (402) with a low hydrogen content barrier layer (432) formed over the semiconductor device (400). The barrier layer (432) is implanted with phosphorous ions (429). The semiconductor device (400) may have a hydrogen getter layer (424) formed under the barrier layer (432). The barrier layer (432) is a high temperature PECVD nitride film, a high temperature PECVD oxynitride film or a high temperature LPCVD nitride film. The hydrogen getter layer (424) is P-doped film having a thickness between 1000 and 2000 Angstroms and is a PSG, BPSG, PTEOS deposited oxide film, or BPTEOS deposited oxide film. Interconnects (438) are made by a tungsten damascene process.