HIGH-QUALITY SILICON SINGLE CRYSTAL AND METHOD OF PRODUCING THE SAME

摘要

A method of producing a high-quality silicon single crystal of a large diameter and a long size in a good yield by controlling the positions where ring-like oxygen-induced stacking faults (R-OSF) occur in the crystal faces and minimizing grown-in defects such as dislocation clusters and infrared scattering bodies that are introduced in the pulling step. Wafers produced from the above high-quality silicon single crystal contain little harmful defects that would deteriorate device characteristics and can be effectively adapted to larger scale integration and size reduction of the devices. Therefore, the method can be extensively utilized in the field of producing semiconductor silicon single crystals.