发明名称 |
ROBUST GROUP III NITRIDE LIGHT EMITTING DIODE FOR HIGH RELIABILITY IN STANDARD APPLICATIONS |
摘要 |
A physically robust light emitting diode is disclosed that offers highreliability in standard packaging and that will withstand high temperature and high humidity conditions. The diode comprises a Group III nitride heterojunction diode with a p-type Group III nitride contact layer, and ohmic contact to the p-type contact layer, and a passivation layer on the ohmic contact. The diode is characterized in that it will emit at least 50 % of its original optical power and remain substantially unchanged in operating voltage after operating for at least 1000 hours at 10 milliamps in an environment of 85 % relative humidity at a temperature of 85 ~C. An LED lamp incorporating the diode is also disclosed. |
申请公布号 |
CA2299379(A1) |
申请公布日期 |
1999.03.04 |
申请号 |
CA19982299379 |
申请日期 |
1998.08.28 |
申请人 |
CREE, INC. |
发明人 |
SLATER, DAVID B., JR.;NEGLEY, GERALD H.;EDMOND, JOHN ADAM |
分类号 |
H01L33/40;H01L33/42;H01L33/44 |
主分类号 |
H01L33/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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