APPARATUS AND PROCESS FOR CRYSTAL GROWTH

摘要

Apparatus for bulk vapour phase crystal growth comprising: at least one source zone and at least one sink zone each associated with means for independent temperature control within the zone; and at least one passage means adapted for transport of vapour from source to sink zone; and additionally comprising means for in-situ monitoring of the sink zone; wherein means for monitoring is substantially non-intrusive in terms of temperature regulation within the sink zone; process for bulk vapour phase crystal growth employing the apparatus; method for starting up the process; method for controlling the process; use for any bulk vapour transport technique; equipment for monitoring growth using the apparatus or process; and crystal grown with the apparatus or process.