Fuse production on a semiconductor body e.g. a memory circuit
摘要
A fuse is produced on a semiconductor body by etching a step in a nonconductive layer and anisotropically etching a deposited conductive layer to leave a residual fuse track. A fuse is produced between two connection contacts on a semiconductor body by: (a) forming a step in a nonconductive layer on the body; (b) depositing a conductive layer in the region of the step; (c) anisotropically etching the conductive layer to leave a residual fuse track in the step region; and (d) electrically connecting the fuse track with the connection contacts. Preferred Feature: The conductive layer consists of aluminum or polysilicon.
申请公布号
DE19736186(A1)
申请公布日期
1999.03.04
申请号
DE1997136186
申请日期
1997.08.20
申请人
SIEMENS AG, 80333 MUENCHEN, DE
发明人
KOLB, STEFAN, DIPL.-ING., 85716 UNTERSCHLEISHEIM, DE