发明名称 Fuse production on a semiconductor body e.g. a memory circuit
摘要 A fuse is produced on a semiconductor body by etching a step in a nonconductive layer and anisotropically etching a deposited conductive layer to leave a residual fuse track. A fuse is produced between two connection contacts on a semiconductor body by: (a) forming a step in a nonconductive layer on the body; (b) depositing a conductive layer in the region of the step; (c) anisotropically etching the conductive layer to leave a residual fuse track in the step region; and (d) electrically connecting the fuse track with the connection contacts. Preferred Feature: The conductive layer consists of aluminum or polysilicon.
申请公布号 DE19736186(A1) 申请公布日期 1999.03.04
申请号 DE1997136186 申请日期 1997.08.20
申请人 SIEMENS AG, 80333 MUENCHEN, DE 发明人 KOLB, STEFAN, DIPL.-ING., 85716 UNTERSCHLEISHEIM, DE
分类号 H01L21/768;H01L23/525;(IPC1-7):H01L21/768 主分类号 H01L21/768
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