发明名称 THIN FILM PHOTOELECTRIC TRANSDUCER
摘要 <p>A thin film photoelectric transducer includes a polycrystalline photoelectric transducing layer (4) and a metal thin film (3) which covers one of the major surfaces of the polycrystalline photoelectric transducing layer (4). The polycrystalline photoelectric transducing layer (4) has an average thickness within a range of 0.5 - 20 νm. At least one of the major surfaces of the polycrystalline photoelectric transducing layer (4) has a surface texture structure, which has minute unevenness whose level difference is smaller than half of the thickness of the polycrystalline photoelectric transducing layer (4) and substantially within a range of 0.05 - 3 νm.</p>
申请公布号 WO1999010933(P1) 申请公布日期 1999.03.04
申请号 JP1998000556 申请日期 1998.02.12
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