发明名称 |
Non-volatile semiconductor memory device |
摘要 |
In a non-volatile semiconductor memory device according to the present invention, a p type source region and a p type drain region are formed in the surface of an n well. A floating gate electrode and a control gate electrode are formed on a channel region with a tunnel oxide film interposed therebetween. According to this structure, a negative potential is applied to the drain region and a positive potential is applied to the control gate electrode when data is programmed, whereby electrons are injected from the drain region to the floating gate electrode by a band-to-band tunnel current induced hot electron injection current in the drain region. As a result, a non-volatile semiconductor memory device is provided which can prevent deterioration of the tunnel oxide film and which can be miniaturized.
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申请公布号 |
US5877524(A) |
申请公布日期 |
1999.03.02 |
申请号 |
US19960596820 |
申请日期 |
1996.02.05 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
OONAKADO, TAKAHIRO;ONODA, HIROSHI;AJIKA, NATSUO;SAKAKIBARA, KIYOHIKO |
分类号 |
H01L21/8247;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):H01L29/788 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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