发明名称 |
Low temperature integrated metallization process and apparatus |
摘要 |
The present invention relates generally to an improved process for providing uniform step coverage on a substrate and planarization of metal layers to form continuous, void-free contacts or vias in sub-half micron applications. In one aspect of the invention, a refractory layer is deposited onto a substrate having high aspect ratio contacts or vias formed thereon. A CVD metal layer is then deposited onto the refractory layer at low temperatures to provide a conformal wetting layer for a PVD metal. Next, a PVD metal is deposited onto the previously formed CVD metal layer at a temperature below that of the melting point temperature of the metal. The resulting CVD/PVD metal layer is substantially void-free. The metallization process is preferably carried out in an integrated processing system that includes both a PVD and CVD processing chamber so that once the substrate is introduced into a vacuum environment, the metallization of the vias and contacts occurs without the formation of an oxide layer over the CVD Al layer.
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申请公布号 |
US5877087(A) |
申请公布日期 |
1999.03.02 |
申请号 |
US19950561605 |
申请日期 |
1995.11.21 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
MOSELY, RODERICK CRAIG;ZHANG, HONG;CHEN, FUSEN;GUO, TED;CHEN LIANG-YUH |
分类号 |
H01L21/285;C23C14/56;C23C16/54;H01L21/28;H01L21/3205;H01L21/677;H01L21/768;(IPC1-7):H01L21/441 |
主分类号 |
H01L21/285 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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