发明名称 In-situ substrate temperature measurement scheme in plasma reactor
摘要 A method and apparatus for noncontact temperature measurement of a substrate insitu by measuring the temperature of a substrate support member and an intermediate member located between the substrate and the substrate support member. The intermediate member has a given heat transfer surface area adjacent both the substrate and the substrate support member and high thermal conductivity so that the intermediate member rapidly approaches a steady state surface temperature after the substrate is positioned in the substrate support member. In this arrangement, the temperature of the substrate can be determined either by calibration or application of a heat transfer equation. Various temperature measuring instruments may be used, including a light probe located in the substrate support member normal to the surface of the intermediate member to measure the radiation from a temperature sensitive material deposited on the bottom surface of the intermediate member.
申请公布号 US5876119(A) 申请公布日期 1999.03.02
申请号 US19950574838 申请日期 1995.12.19
申请人 APPLIED MATERIALS, INC. 发明人 ISHIKAWA, TETSUYA;LUE, BRIAN
分类号 G01J5/04;(IPC1-7):G01K1/16 主分类号 G01J5/04
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