发明名称 |
Process for producing oxide thin films and chemical vapor deposition apparatus used therefor |
摘要 |
The present invention relates to a process for producing crystallographic oriented oxide thin films having an NaCl-type structure, a spinel structure or a Wurtzite structure used as a buffer layer to obtain a functional oxide thin film such as a superconductive oxide thin film and a ferroelectric thin film, and a chemical vapor deposition apparatus used therefor. A rotatable substrate holder is provided in a reaction chamber. The substrate holder, which holds substrates thereunder, includes a substrate heater. The substrate holder is grounded to provide an electrode. Another electrode, which is connected to a high frequency power source, is located opposing the substrate holder in the reaction chamber. At a side wall of the reaction chamber, an exhaust is arranged. In a plasma electric discharge area formed between the substrate holder and the electrode, a material gas supplier is located, having a predetermined tilt angle theta with respect to the substrate holder.
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申请公布号 |
US5876504(A) |
申请公布日期 |
1999.03.02 |
申请号 |
US19970931672 |
申请日期 |
1997.09.17 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD |
发明人 |
FUJI, EIJI;TOMOZAWA, ATSUSHI;TORII, HIDEO;TAKAYAMA, RYOICHI |
分类号 |
C30B25/10;C23C16/40;C23C16/455;C23C16/50;C23C16/509;C30B25/16;(IPC1-7):C23C16/00 |
主分类号 |
C30B25/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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