| 摘要 |
PROBLEM TO BE SOLVED: To prevent any heavy metal contamination of a silicon wafer from occurring by forming a lot of pits on the surface of a silicon base material, while covering these pits with a diamond coating. SOLUTION: A roughened surface 3 is formed on one side of a silicon base material 2 with an abrasive of rough grains by lapping or honing work or the like. This roughened surface 3 is subjected to a chemical process, for example, an alkali etching process as well as a selective etching process, whereby a lot of deep inverse pyramidal pits 4 are formed in the roughened surface 3. A surface (pit forming surface) formed with many pits 4 is covered with a diamond coating 5, and surface hardening of this pit forming surface is carried out, whereby a dressing tool 1 is manufactured. Thus, since the integrally formed pits 4 is covered with the diamond coating 5, not electrodeposition of diamond abrasive grains, any metal contamination will not occur in a polished member such as a silicon wafer or the like. |
