发明名称 PRODUCTION OF HIGHLY PURE SILICON BY ZINC REDUCTION
摘要 PROBLEM TO BE SOLVED: To provide a method for producing a highly pure polycrystal silicon, stable in quality for a solar battery use and matching to price cutting. SOLUTION: This method for producing a highly pure silicon combines a zinc-smelting process comprising a step for reacting a zinc-containing ore with oxygen to provide a zinc oxide, a step for reducing the zinc oxide with carbon to provide a zinc gas, and a step for distilling and condensing the generated zinc gas to collect molten zinc, with a process for carrying out a zinc-reduction of silicon tetrachloride, which is a silicon raw material. In the method, when carrying out the zinc-reduction, the silicon tetrachloride is reduced by the molten zinc in a reaction vessel to collect a polycrystalline silicon, or when carrying out the zinc reduction, the silicon tetrachloride is reduced by the zinc gas in the reaction vessel to collect the polycrystalline silicon.
申请公布号 JPH1160228(A) 申请公布日期 1999.03.02
申请号 JP19970217497 申请日期 1997.08.12
申请人 SUMITOMO SHICHITSUKUSU AMAGASAKI:KK 发明人 NATSUME YOSHITAKE;KUMANO HARUO
分类号 C01B33/02;C01B33/033;C22B19/04;H01L31/04 主分类号 C01B33/02
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