SILICON CARBIDE COMPOSITE MATERIAL, ITS PRODUCTION AND SINGLE CRYSTAL SILICON CARBIDE

摘要

PROBLEM TO BE SOLVED: To efficiently grow a high-quality silicon carbide single crystal which has almost no micropipe defect, distortion or intergranular faces by controlling the growing conditions of crystal to be uniform in the whole interface. SOLUTION: A β-SiC layer 2 is formed by reduced pressure thermochemical vapor deposition method on the surface of an α-SiC single crystal base body 1 at 1350 to 1500 deg.C and 5 to 12 KPa pressure. The polycrystalline β-SiC layer is converted into α-SiC by heat treatment so that a single crystal with orientation in the same direction as the crystalline axis of the α-SiC single crystal base body 1 is grown in the SiC layer 2. In this method, the interface 3 of the β-SiC layer 2 with the α-SiC single crystal base body 1 where the growth of the signal crystal is started is formed as a highly oriented film having (111) or (220) Miller index.