发明名称 |
Trench lateral overflow drain antiblooming structure for virtual phase charge coupled devices with virtual gate element |
摘要 |
The lateral overflow drain for charge coupled devices includes: a semiconductor region 70 of a first conductivity type having a trench 92; a drain region 24 of a second conductivity type below the trench 92; a gate 20 in the trench 92 overlying and separated from a portion of the semiconductor region 70; and a virtual gate 30 of the first conductivity type in the semiconductor region 70 adjacent the trench 92.
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申请公布号 |
US5877520(A) |
申请公布日期 |
1999.03.02 |
申请号 |
US19970916018 |
申请日期 |
1997.08.21 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
HYNECEK, JAROSLAV |
分类号 |
H01L27/148;(IPC1-7):H01L27/108 |
主分类号 |
H01L27/148 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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