| 摘要 |
This invention discloses a novel design for increasing the surface area of a stacked capacitor used in DRAM devices. The upper and lower plates of the capacitor comprises of several concave structures. The concave structures are first produces on an LS-SOG layer using focused ion beam lithography, which is then mapped to the lower plate of the capacitor. A dielectric layer is deposited, after which an upper plate is formed. The concave structures increases the plate area, thereby increasing charge storage capacity.
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