Method of fabricating a semiconductor device having a silicon nitride film made of silane, ammonia and nitrogen

摘要

A semiconductor device includes a semiconductor element. A silicon nitride film covers the semiconductor element. The silicon nitride film is made of SiXNYHZ, where X, Y, and Z denote atomic fractions of Si, N, and H resptively. The silicon nitride film relates to an optical absorption edge wavelength shorter than 254 nm. A mean area of regions surrounded by crystal-like grain boundaries at a surface of the silicon nitride film is equal to 4.5x104 nm2 or more. The semiconductor element may include a memory element from which information can be erased by exposure to ultraviolet rays.