发明名称 |
Method of making charge-coupled device with microlens |
摘要 |
A CCD and manufacturing method thereof is disclosed including: a first conductivity-type substrate having a convex portion; a first conductivity-type charge transmission domain formed on the substrate excluding the convex portion; a light detecting domain formed on the convex portion of the substrate and having a convex top surface; a second conductivity-type high-concentration impurity area formed on the top surface of the light detecting domain; a gate insulating layer formed on the substrate excluding the light detecting domain; a transmission gate formed on the gate insulating layer; a planarization layer formed on the substrate including the transmission gate; and a microlens formed on the planarization layer above a photodiode.
|
申请公布号 |
US5877040(A) |
申请公布日期 |
1999.03.02 |
申请号 |
US19970852562 |
申请日期 |
1997.05.07 |
申请人 |
LG SEMICON CO., LTD. |
发明人 |
PARK, CHUL HO;SONG, KWANG BOK |
分类号 |
H01L31/0232;H01L31/0352;H01L31/113;(IPC1-7):H01L21/339 |
主分类号 |
H01L31/0232 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|