发明名称 Method of making charge-coupled device with microlens
摘要 A CCD and manufacturing method thereof is disclosed including: a first conductivity-type substrate having a convex portion; a first conductivity-type charge transmission domain formed on the substrate excluding the convex portion; a light detecting domain formed on the convex portion of the substrate and having a convex top surface; a second conductivity-type high-concentration impurity area formed on the top surface of the light detecting domain; a gate insulating layer formed on the substrate excluding the light detecting domain; a transmission gate formed on the gate insulating layer; a planarization layer formed on the substrate including the transmission gate; and a microlens formed on the planarization layer above a photodiode.
申请公布号 US5877040(A) 申请公布日期 1999.03.02
申请号 US19970852562 申请日期 1997.05.07
申请人 LG SEMICON CO., LTD. 发明人 PARK, CHUL HO;SONG, KWANG BOK
分类号 H01L31/0232;H01L31/0352;H01L31/113;(IPC1-7):H01L21/339 主分类号 H01L31/0232
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