| 摘要 |
<p>PROBLEM TO BE SOLVED: To improve the yield of a semiconductor device by effectively removing particles caused at the time of laser marking on a semiconductor wafer substrate. SOLUTION: In marking by emitting a laser beam 7 to a semiconductor wafer substrate 2, a gas 5 is blown to the marking area at a prescribed flow rate and sucked from the area at the same flow rate, so that a gas flow is generated with a prescribed flow rate near the making area effectively to remove particles 9 caused on in the semiconductor wafer substrate 2. In addition, when the semiconductor wafer substrate 2 is fixed so that its surface is faced downward, and the substrate 2 is irradiated by a laser beam upward from the lower part, the particles can be removed effectively by a smaller amount of the gas flow.</p> |
