发明名称 |
Oxide layer patterned by vapor phase etching |
摘要 |
Hydrogen fluoride undercut of oxide layers may be reduced by using a low pressure mixture of gaseous hydrogen fluoride and gaseous ammonia mixture. Organic photoresists can be used as a masking material when using the gaseous hydrogen fluoride/ammonia mixture without resulting in an enhanced reaction rate. In addition, because of the reaction conditions, the dimensions in the oxide layer being etched can be specifically sized smaller than openings made in the overcoating masking material.
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申请公布号 |
US5876879(A) |
申请公布日期 |
1999.03.02 |
申请号 |
US19970865258 |
申请日期 |
1997.05.29 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
KLEINHENZ, RICHARD L.;NATZLE, WESLEY C.;YU, CHIENFAN |
分类号 |
H01L21/311;(IPC1-7):G03F9/00 |
主分类号 |
H01L21/311 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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