| 发明名称 |
PROCEDIMENTO DI METALLIZZAZIONE MULTILIVELLO AD ALTA PLANARIZZAZIONE PER DISPOSITIVI A SEMICONDUTTORE |
| 摘要 |
<p>Subject-matter of this invention is a method of high planarization multi-level metallization for semiconductor devices in which, starting from a first layer of planarized dielectric material, the interconnection of each level are embedded within a layer of dielectric material. <IMAGE></p> |
| 申请公布号 |
IT1293536(B1) |
申请公布日期 |
1999.03.01 |
| 申请号 |
IT1997RM00431 |
申请日期 |
1997.07.14 |
| 申请人 |
CONSORZIO EAGLE |
发明人 |
RUSSO FELICE;MICCOLI GIUSEPPE;NARDI NATALE;RICOTTI MARCO;FRANCHINA ALFREDO |
| 分类号 |
H01L21/3205;H01L21/768;H01L23/532 |
主分类号 |
H01L21/3205 |
| 代理机构 |
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