发明名称 |
RF DIODE AND METHOD OF MANUFACTURING SAME |
摘要 |
An RF diode, and method for its manufacture, in which a well, doped n-conductive or p-conductive, is formed in a high-ohmic silicon substrate. A silicon epitaxial layer is provided over a first subregion of a surface of the well wherein the layer has the same conductivity type as the doped well. The silicon epitaxial layer is provided with a first Schottky contact layer onto which a first contact metallization is applied. A second subregion located next to the first subregion of the surface of the well is provided with a second Schottky contact layer onto which a second contact metallization is applied.
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申请公布号 |
CA2245759(A1) |
申请公布日期 |
1999.02.27 |
申请号 |
CA19982245759 |
申请日期 |
1998.08.25 |
申请人 |
SIEMENS AKTIENGESELLSCHAFT |
发明人 |
LOSEHAND, REINHARD;WERTHMANN, HUBERT |
分类号 |
H01L21/329;H01L27/08;H01L29/872;(IPC1-7):H01L29/872;H01L21/328 |
主分类号 |
H01L21/329 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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