| 摘要 |
PROBLEM TO BE SOLVED: To remove or decrease catalyst elements from the inside of a crystalline semiconductor film containing silicon, by forming a gettering region by doping group-13 and group-15 elements selectively, and moving catalyst elements in a region to be gettered to the gettering region by heat treatment. SOLUTION: First of all, a noncrystalline silicon film 103 containing silicon is formed on a substrate 101, a layer 104 containing Ni is formed on the surface, and Ni is led into the noncrystalline semiconductor film 103. Next, the noncrystalline semiconductor film 103 is crystallized by heat treatment, and a crystalline silicon film 105 is formed. After that, a laser beam is emitted to obtain a crystalline silicon film 106. Next, B and P electrodes are led into the crystallized film 106 selectively, and a gettering region 108 is formed. Next, Ni in a region 109 into which impurity elements are not led is gettered into the gettering region 108, and a crystalline semiconductor film 110 of a reduced Ni concentration is formed and patterning is preformed. |
